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Low-k dielectric
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Low-k dielectric : ウィキペディア英語版
Low-k dielectric
In semiconductor manufacturing, a low-κ is a material with a small dielectric constant relative to silicon dioxide. Although the proper symbol for the dielectric constant is the Greek letter κ (kappa), in conversation such materials are referred to as being "low-k" (low-kay) rather than "low-κ" (low-kappa). Low-κ dielectric material implementation is one of several strategies used to allow continued scaling of microelectronic devices, colloquially referred to as extending Moore's law. In digital circuits, insulating dielectrics separate the conducting parts (wire interconnects and transistors) from one another. As components have scaled and transistors have gotten closer together, the insulating dielectrics have thinned to the point where charge build up and crosstalk adversely affect the performance of the device. Replacing the silicon dioxide with a low-κ dielectric of the same thickness reduces parasitic capacitance, enabling faster switching speeds and lower heat dissipation.
==Low-κ materials==

The dielectric constant of SiO2, the insulating material used in silicon chips, is 3.9. This number is the ratio of the permittivity of SiO2 divided by permittivity of vacuum, εSiO20,where ε0 = 8.854×10−6 pF/μm. There are many materials with lower dielectric constants but few of them can be suitably integrated into a manufacturing process. Development efforts have focused primarily on three classes of materials:

抄文引用元・出典: フリー百科事典『 ウィキペディア(Wikipedia)
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